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Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, ...
Laterally coupled circular quantum dots under applied electric field
The optical response of a system of two laterally coupled quantum dots with circular cross-sectional shape is investigated within the effective mass approximation, taking into account the effects of the change in the ...
Donor impurity states in semiconductor zincblende nitride quantum systems as a source of nonlinear optical response
The optical absorption and the optical rectification coefficients associated to hydrogenic impurity interstate transitions in zincblende GaN-based nanostructures of the quantum wire type are investigated. The system is ...
Nonlinear optical response in a zincblende GaN cylindrical quantum dot with donor impurity center
We calculate the nonlinear optical absorption coefficient of a cylindrical zincblende GaN-based quantum dot. For this purpose, we consider Coulomb interactions between electrons and an impurity ionized donor atom. The ...
Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
The differential cross-section of electron Raman scattering and the Raman gain arecalculated and analysed in the case of prismatic quantum dots with equilateral trianglebase shape. The study takes into account their ...
Effects of external electric field on the optical and electronic properties of blue phosphorene nanoribbons: A DFT study
Using first principles calculations we investigate the effect of external electric fields in the optical and electronic properties of blue-phosphorene nanoribbons. It is shown that the application of a static external ...
Effects of hydrostatic pressure and electric field on the electron-related optical properties in GaAs multiple quantum well
The properties of the electronic structure of a finite-barrier semiconductor multiple quantum well are investigated taking into account the effects of the application of a static electric field and hydrostatic pressure. ...