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Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, ...
Ab initio study of hydrogen chemisorption in nitrogen-doped carbon nanotubes
The electronic structure of single walled nitrogen-doped carbon nanotubes is calculated by first principles using density functional theory within the supercell approach with periodic boundary conditions. The effect of the ...
Laterally coupled circular quantum dots under applied electric field
The optical response of a system of two laterally coupled quantum dots with circular cross-sectional shape is investigated within the effective mass approximation, taking into account the effects of the change in the ...
Nonlinear optical response in a zincblende GaN cylindrical quantum dot with donor impurity center
We calculate the nonlinear optical absorption coefficient of a cylindrical zincblende GaN-based quantum dot. For this purpose, we consider Coulomb interactions between electrons and an impurity ionized donor atom. The ...
Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
The differential cross-section of electron Raman scattering and the Raman gain arecalculated and analysed in the case of prismatic quantum dots with equilateral trianglebase shape. The study takes into account their ...
Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW
Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this ...