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dc.creatorTiutiunnyk A.spa
dc.creatorAkimov V.spa
dc.creatorTulupenko V.spa
dc.creatorMora-Ramos M.E.spa
dc.creatorKasapoglu E.spa
dc.creatorMorales A.L.spa
dc.creatorDuque C.A.spa
dc.date.accessioned2016-07-27T20:27:54Z
dc.date.available2016-07-27T20:27:54Z
dc.date.created2016
dc.identifier.issn14346028spa
dc.identifier.urihttp://hdl.handle.net/11407/2479
dc.description.abstractThe differential cross-section of electron Raman scattering and the Raman gain arecalculated and analysed in the case of prismatic quantum dots with equilateral trianglebase shape. The study takes into account their dependencies on the size of the triangle,the influence of externally applied electric field as well as the presence of an ionizeddonor center located at the triangle’s orthocenter. The calculations are made within theeffective mass and parabolic band approximations, with a diagonalization scheme beingapplied to obtain the eigenfunctions and eigenvalues of the x-y Hamiltonian. The incidentand secondary (scattered) radiation have been considered linearly-polarized along they-direction, coinciding with the direction of theapplied electric field. For the case with an impurity center, Raman scattering with theintermediate state energy below the initial state one has been found to show maximumdifferential cross-section more than by an order of magnitude bigger than that resultingfrom the scheme with lower intermediate state energy. The Raman gain has maximum magnitudearound 35 nm dot size andelectric field of 40 kV/cm forthe case without impurity and at maximum considered values of the input parameters for thecase with impurity. Values of Raman gain of the order of up to 104cm-1 are predicted in bothcases. © 2016, EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.eng
dc.language.isoengspa
dc.publisherSpringer Heidelbergspa
dc.relation.isversionofhttp://link.springer.com/article/10.1140%2Fepjb%2Fe2016-70001-3spa
dc.rightsinfo:eu-repo/semantics/restrictedAccessspa
dc.sourceScopusspa
dc.titleElectron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric fieldspa
dc.typeinfo:eu-repo/semantics/articlespa
dc.typeArticlespa
dc.rights.accessRightsinfo:eu-repo/semantics/restrictedAccessspa
dc.contributor.affiliationTiutiunnyk, A., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombia, Department of Physics, Donbass StateEngineering Academy, Shkadinova 72, Kramatorsk, Ukrainespa
dc.contributor.affiliationAkimov, V., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombia, Department of Physics, Donbass StateEngineering Academy, Shkadinova 72, Kramatorsk, Ukraine, Universidad de Medellín, Carrera 87 No., Medellín, Colombiaspa
dc.contributor.affiliationTulupenko, V., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombia, Department of Physics, Donbass StateEngineering Academy, Shkadinova 72, Kramatorsk, Ukrainespa
dc.contributor.affiliationMora-Ramos, M.E., Centro de Investigación en Ciencias,Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma delEstado de Morelos, Av. Universidad 1001, CP, Cuernavaca, Morelos, Mexicospa
dc.contributor.affiliationKasapoglu, E., Cumhuriyet University, PhysicsDepartment, Sivas, Turkeyspa
dc.contributor.affiliationMorales, A.L., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombiaspa
dc.contributor.affiliationDuque, C.A., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombiaspa
dc.identifier.doi10.1140/epjb/e2016-70001-3spa
dc.subject.keywordEigenvalues and eigenfunctionseng
dc.subject.keywordElectric fieldseng
dc.subject.keywordNanocrystalseng
dc.subject.keywordPoint defectseng
dc.subject.keywordRaman scatteringeng
dc.subject.keywordSemiconductor quantum dotseng
dc.subject.keywordDiagonalizationseng
dc.subject.keywordDifferential cross sectioneng
dc.subject.keywordDonor impuritieseng
dc.subject.keywordElectron Raman scatteringeng
dc.subject.keywordImpurity centerseng
dc.subject.keywordIntermediate stateeng
dc.subject.keywordLinearly polarizedeng
dc.subject.keywordMesoscopic and nanoscale systemseng
dc.subject.keywordElectromagnetic wave scatteringeng
dc.abstractThe differential cross-section of electron Raman scattering and the Raman gain arecalculated and analysed in the case of prismatic quantum dots with equilateral trianglebase shape. The study takes into account their dependencies on the size of the triangle,the influence of externally applied electric field as well as the presence of an ionizeddonor center located at the triangle’s orthocenter. The calculations are made within theeffective mass and parabolic band approximations, with a diagonalization scheme beingapplied to obtain the eigenfunctions and eigenvalues of the x-y Hamiltonian. The incidentand secondary (scattered) radiation have been considered linearly-polarized along they-direction, coinciding with the direction of theapplied electric field. For the case with an impurity center, Raman scattering with theintermediate state energy below the initial state one has been found to show maximumdifferential cross-section more than by an order of magnitude bigger than that resultingfrom the scheme with lower intermediate state energy. The Raman gain has maximum magnitudearound 35 nm dot size andelectric field of 40 kV/cm forthe case without impurity and at maximum considered values of the input parameters for thecase with impurity. Values of Raman gain of the order of up to 104cm-1 are predicted in bothcases. © 2016, EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.eng
dc.creator.affiliationGrupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombiaspa
dc.creator.affiliationDepartment of Physics, Donbass StateEngineering Academy, Shkadinova 72, Kramatorsk, Ukrainespa
dc.creator.affiliationUniversidad de Medellín, Carrera 87 No., Medellín, Colombiaspa
dc.creator.affiliationCentro de Investigación en Ciencias,Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma delEstado de Morelos, Av. Universidad 1001, CP, Cuernavaca, Morelos, Mexicospa
dc.creator.affiliationCumhuriyet University, PhysicsDepartment, Sivas, Turkeyspa
dc.relation.ispartofenThe European Physical Journal B April 2016, 89:107eng


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