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Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW

dc.creatorTulupenko V.spa
dc.creatorDuque C.A.spa
dc.creatorMorales A.L.spa
dc.creatorTiutiunnyk A.spa
dc.creatorDemediuk R.spa
dc.creatorDmytrychenko T.spa
dc.creatorFomina O.spa
dc.creatorAkimov V.spa
dc.creatorRestrepo R.L.spa
dc.creatorMora-Ramos M.E.spa
dc.date.accessioned2017-05-12T16:05:53Z
dc.date.available2017-05-12T16:05:53Z
dc.date.created2016
dc.identifier.issn3701972
dc.identifier.urihttp://hdl.handle.net/11407/3140
dc.description.abstractAdditional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.eng
dc.language.isoeng
dc.publisherWiley-VCH Verlagspa
dc.relation.isversionofhttp://onlinelibrary.wiley.com/doi/10.1002/pssb.201600464/abstract;jsessionid=9C92A508C1156A6A8DAAEA5F8D37A0DE.f03t02spa
dc.sourceScopusspa
dc.subjectBinding energyspa
dc.subjectDelta dopingspa
dc.subjectImpuritiesspa
dc.subjectQuantum wellsspa
dc.subjectSi0.8Ge0.2spa
dc.titleBackground impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QWspa
dc.typeArticle in Presseng
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.contributor.affiliationTulupenko, V., Grupo de Materia Condensada-UdeA, Universidad de Antioquia UdeA, Calle 70 No. 52-21MedellínColombiaspa
dc.contributor.affiliationDuque, C.A., Grupo de Materia Condensada-UdeA, Universidad de Antioquia UdeA, Calle 70 No. 52-21MedellínColombiaspa
dc.contributor.affiliationMorales, A.L., Grupo de Materia Condensada-UdeA, Universidad de Antioquia UdeA, Calle 70 No. 52-21MedellínColombiaspa
dc.contributor.affiliationTiutiunnyk, A., Grupo de Materia Condensada-UdeA, Universidad de Antioquia UdeA, Calle 70 No. 52-21MedellínColombia, Donbas State Engineering AcademyKramatorsk 84313Ukrainespa
dc.contributor.affiliationDemediuk, R., Donbas State Engineering AcademyKramatorsk 84313Ukrainespa
dc.contributor.affiliationDmytrychenko, T., Donbas State Engineering AcademyKramatorsk 84313Ukrainespa
dc.contributor.affiliationFomina, O., Donbas State Engineering AcademyKramatorsk 84313Ukrainespa
dc.contributor.affiliationAkimov, V., Departamento de Ciencias Basicas, Universidad de MedellínCarrera 87 No. 30-65 MedellínColombiaspa
dc.contributor.affiliationRestrepo, R.L., Universidad EIAEnvigadoColombiaspa
dc.contributor.affiliationMora-Ramos, M.E., Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209 CuernavacaMorelos, Méxicospa
dc.identifier.doi10.1002/pssb.201600464
dc.relation.ispartofesPhysica Status Solidi (B) Basic Researchspa
dc.type.driverinfo:eu-repo/semantics/article


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