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dc.creatorTulupenko V.
dc.creatorAkimov V.
dc.creatorDemediuk R.
dc.creatorDuque C.
dc.creatorFomina O.
dc.creatorSushchenko D.
dc.date2019
dc.date.accessioned2020-04-29T14:54:04Z
dc.date.available2020-04-29T14:54:04Z
dc.identifier.isbn9781728120652
dc.identifier.urihttp://hdl.handle.net/11407/5801
dc.descriptionEffect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region. © 2019 IEEE.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.isversionofhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85070899466&doi=10.1109%2fELNANO.2019.8783451&partnerID=40&md5=45e762c2bc5f25eca48ac26c0298da6a
dc.source2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings
dc.subjectbackground impurity
dc.subjectmodulation doping
dc.subjectSiGe quantum wells
dc.subjectBinding energy
dc.subjectNanotechnology
dc.subjectSi-Ge alloys
dc.subjectBackground impurities
dc.subjectEnergy structures
dc.subjectImpurity binding energy
dc.subjectModulation doping
dc.subjectQuantum well structures
dc.subjectSiGe quantum wells
dc.subjectTHz frequencies
dc.subjectTunable optical devices
dc.subjectSemiconductor quantum wells
dc.titleEffect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW
dc.typeConference Papereng
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.publisher.programFacultad de Ciencias Básicas
dc.identifier.doi10.1109/ELNANO.2019.8783451
dc.relation.citationstartpage177
dc.relation.citationendpage180
dc.publisher.facultyFacultad de Ciencias Básicas
dc.affiliationTulupenko, V., Physics Department, Donbas State Engineering Academy, Kramatorsk, Ukraine; Akimov, V., Facultad de Ciencias Basicas, Universidad de Medellín, Medellín, Colombia; Demediuk, R., Physics Department, Donbas State Engineering Academy, Kramatorsk, Ukraine; Duque, C., Grupo de Materia Condensada-UdeA, Universidad de Antioquia, Medellin, Colombia; Fomina, O., Physics Department, Donbas State Engineering Academy, Kramatorsk, Ukraine; Sushchenko, D., Physics Department, Donbas State Engineering Academy, Kramatorsk, Ukraine
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dc.type.versioninfo:eu-repo/semantics/publishedVersion
dc.type.driverinfo:eu-repo/semantics/article


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