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Intersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field

dc.contributor.authorTulupenko V
dc.contributor.authorAkimov V
dc.contributor.authorDemediuk R
dc.contributor.authorTiutiunnyk A
dc.contributor.authorDuque C
dc.contributor.authorSushchenko D
dc.contributor.authorFomina O
dc.contributor.authorMorales A
dc.contributor.authorLaroze D.
dc.date.accessioned2023-10-24T19:25:15Z
dc.date.available2023-10-24T19:25:15Z
dc.date.created2022
dc.identifier.isbn9781665469227
dc.identifier.urihttp://hdl.handle.net/11407/8059
dc.description.abstractThe energy differences between subbands of a semiconductor quantum well delta-doped inside the well can be tuned by electronic temperature. The effect can be used in a novel schematic of a tunable semiconductor optical device. Here we study numerically the dynamics of the difference between two lower size-quantized subbands against electronic temperature and external transverse electric field in 20 nm wide SiGe/Si doped with a hydrogenic donor to the edge and the center of the well. © 2022 IEEE.eng
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.isversionofhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85142622068&doi=10.1109%2fELNANO54667.2022.9927043&partnerID=40&md5=adb6b29eaadb90be1fe6915160202b49
dc.sourceIEEE Int. Conf. Electron. Nanotechnol., ELNANO - Proc.
dc.source2022 IEEE 41st International Conference on Electronics and Nanotechnology, ELNANO 2022 - Proceedingseng
dc.subjectElectric fieldeng
dc.subjectModulation dopingeng
dc.subjectShallow impurityeng
dc.subjectSiGe quantum wellseng
dc.titleIntersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Fieldeng
dc.typeConference Paper
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.publisher.programCiencias Básicasspa
dc.type.spaDocumento de conferencia
dc.identifier.doi10.1109/ELNANO54667.2022.9927043
dc.relation.citationstartpage133
dc.relation.citationendpage136
dc.publisher.facultyFacultad de Ciencias Básicasspa
dc.affiliationTulupenko, V., Donbas State Engineering Academy, Physics Department, Kramatorsk, Ukraine
dc.affiliationAkimov, V., Universidad de Medellin, Facultad de Ciencias Basicasz, Medellin, Colombia, Universidad de Antioquia, Grupo de Materia Condensada-UdeA, Medellin, Colombia
dc.affiliationDemediuk, R., Donbas State Engineering Academy, Physics Department, Kramatorsk, Ukraine
dc.affiliationTiutiunnyk, A., Instituto de Alta Investigacion, Universidad de Tarapaca, Arica, Chile
dc.affiliationDuque, C., Universidad de Antioquia, Grupo de Materia Condensada-UdeA, Medellin, Colombia
dc.affiliationSushchenko, D., Donbas State Engineering Academy, Physics Department, Kramatorsk, Ukraine
dc.affiliationFomina, O., Donbas State Engineering Academy, Physics Department, Kramatorsk, Ukraine
dc.affiliationMorales, A., Universidad de Antioquia, Grupo de Materia Condensada-UdeA, Medellin, Colombia
dc.affiliationLaroze, D., Instituto de Alta Investigacion, Universidad de Tarapaca, Arica, Chile
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dc.type.versioninfo:eu-repo/semantics/publishedVersion
dc.identifier.reponamereponame:Repositorio Institucional Universidad de Medellín
dc.identifier.repourlrepourl:https://repository.udem.edu.co/
dc.identifier.instnameinstname:Universidad de Medellín
dc.contributor.event41st IEEE International Conference on Electronics and Nanotechnology, ELNANO 2022


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