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Higher-order obstructed atomic insulator phase inpentagonal monolayer PdSe2

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Fecha
2024
Autor
Nuñez V
Bravo S
Correa J.D
Chico L
Pacheco M.

Citación

       
TY - GEN T1 - Higher-order obstructed atomic insulator phase inpentagonal monolayer PdSe2 Y1 - 2024 UR - http://hdl.handle.net/11407/8434 PB - Institute of Physics AB - We investigate a pentagonal monolayer of palladium diselenide, a stable two-dimensional system, as a material realization of a crystalline phase with nontrivial topological electronic properties. We find that its electronic structure involves an atomic obstructed insulator related to higher-order topology, which is a consequence of the selenium-selenium bond dimerization along with inversion and time-reversal symmetry). By means of first-principles calculations and the analysis of symmetry indicators and topological invariants, we also characterize the electronic corner states associated with the atomic obstruction and compute the corresponding corner charge for a finite geometry, which is found to be not quantized but still inversion-protected. Applying tensile strain to the finite geometry we verify the robustness of the corner states and also achieve a strain-controlled variation of the corner charge magnitude. © 2023 IOP Publishing Ltd. ER - @misc{11407_8434, author = {}, title = {Higher-order obstructed atomic insulator phase inpentagonal monolayer PdSe2}, year = {2024}, abstract = {We investigate a pentagonal monolayer of palladium diselenide, a stable two-dimensional system, as a material realization of a crystalline phase with nontrivial topological electronic properties. We find that its electronic structure involves an atomic obstructed insulator related to higher-order topology, which is a consequence of the selenium-selenium bond dimerization along with inversion and time-reversal symmetry). By means of first-principles calculations and the analysis of symmetry indicators and topological invariants, we also characterize the electronic corner states associated with the atomic obstruction and compute the corresponding corner charge for a finite geometry, which is found to be not quantized but still inversion-protected. Applying tensile strain to the finite geometry we verify the robustness of the corner states and also achieve a strain-controlled variation of the corner charge magnitude. © 2023 IOP Publishing Ltd.}, url = {http://hdl.handle.net/11407/8434} }RT Generic T1 Higher-order obstructed atomic insulator phase inpentagonal monolayer PdSe2 YR 2024 LK http://hdl.handle.net/11407/8434 PB Institute of Physics AB We investigate a pentagonal monolayer of palladium diselenide, a stable two-dimensional system, as a material realization of a crystalline phase with nontrivial topological electronic properties. We find that its electronic structure involves an atomic obstructed insulator related to higher-order topology, which is a consequence of the selenium-selenium bond dimerization along with inversion and time-reversal symmetry). By means of first-principles calculations and the analysis of symmetry indicators and topological invariants, we also characterize the electronic corner states associated with the atomic obstruction and compute the corresponding corner charge for a finite geometry, which is found to be not quantized but still inversion-protected. Applying tensile strain to the finite geometry we verify the robustness of the corner states and also achieve a strain-controlled variation of the corner charge magnitude. © 2023 IOP Publishing Ltd. OL Spanish (121)
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Resumen
We investigate a pentagonal monolayer of palladium diselenide, a stable two-dimensional system, as a material realization of a crystalline phase with nontrivial topological electronic properties. We find that its electronic structure involves an atomic obstructed insulator related to higher-order topology, which is a consequence of the selenium-selenium bond dimerization along with inversion and time-reversal symmetry). By means of first-principles calculations and the analysis of symmetry indicators and topological invariants, we also characterize the electronic corner states associated with the atomic obstruction and compute the corresponding corner charge for a finite geometry, which is found to be not quantized but still inversion-protected. Applying tensile strain to the finite geometry we verify the robustness of the corner states and also achieve a strain-controlled variation of the corner charge magnitude. © 2023 IOP Publishing Ltd.
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http://hdl.handle.net/11407/8434
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