dc.contributor.author | Nuñez V | |
dc.contributor.author | Bravo S | |
dc.contributor.author | Correa J.D | |
dc.contributor.author | Chico L | |
dc.contributor.author | Pacheco M. | |
dc.date.accessioned | 2024-07-31T21:06:58Z | |
dc.date.available | 2024-07-31T21:06:58Z | |
dc.date.created | 2024 | |
dc.identifier.issn | 20531583 | |
dc.identifier.uri | http://hdl.handle.net/11407/8434 | |
dc.description | We investigate a pentagonal monolayer of palladium diselenide, a stable two-dimensional system, as a material realization of a crystalline phase with nontrivial topological electronic properties. We find that its electronic structure involves an atomic obstructed insulator related to higher-order topology, which is a consequence of the selenium-selenium bond dimerization along with inversion and time-reversal symmetry). By means of first-principles calculations and the analysis of symmetry indicators and topological invariants, we also characterize the electronic corner states associated with the atomic obstruction and compute the corresponding corner charge for a finite geometry, which is found to be not quantized but still inversion-protected. Applying tensile strain to the finite geometry we verify the robustness of the corner states and also achieve a strain-controlled variation of the corner charge magnitude. © 2023 IOP Publishing Ltd. | |
dc.language.iso | eng | |
dc.publisher | Institute of Physics | |
dc.relation.isversionof | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85179891883&doi=10.1088%2f2053-1583%2fad0f2a&partnerID=40&md5=5ed26bcda8080e1d62cc8cdabd585e54 | |
dc.source | 2D Materials | |
dc.source | 2D Materials | |
dc.source | Scopus | |
dc.subject | Higher order topology | eng |
dc.subject | Pentagonal materials | eng |
dc.subject | SSH model | eng |
dc.subject | Atoms | eng |
dc.subject | Electronic properties | eng |
dc.subject | Electronic structure | eng |
dc.subject | Monolayers | eng |
dc.subject | Palladium compounds | eng |
dc.subject | Selenium compounds | eng |
dc.subject | Tensile strain | eng |
dc.subject | Topology | eng |
dc.subject | A-stable | eng |
dc.subject | Finite geometry | eng |
dc.subject | High order topology | eng |
dc.subject | High-order | eng |
dc.subject | Higher-order | eng |
dc.subject | Insulator phasis | eng |
dc.subject | Order topologies | eng |
dc.subject | Pentagonal material | eng |
dc.subject | SSH model | eng |
dc.subject | Two-dimensional systems | eng |
dc.subject | Selenium | eng |
dc.title | Higher-order obstructed atomic insulator phase inpentagonal monolayer PdSe2 | eng |
dc.type | article | |
dc.rights.accessrights | info:eu-repo/semantics/restrictedAccess | |
dc.type.spa | Artículo | |
dc.identifier.doi | 10.1088/2053-1583/ad0f2a | |
dc.relation.citationvolume | 11 | |
dc.relation.citationissue | 1 | |
dc.publisher.faculty | Facultad de Ciencias Básicas | spa |
dc.affiliation | Nuñez, V., Departamento de Física, Universidad Técnica Federico Santa María, Casilla 110 V, Valparaíso, Chile | |
dc.affiliation | Bravo, S., Departamento de Física, Universidad Técnica Federico Santa María, Casilla 110 V, Valparaíso, Chile | |
dc.affiliation | Correa, J.D., Facultad de Ciencias Básicas, Universidad de Medellín, Medellín, Colombia | |
dc.affiliation | Chico, L., IGISC, Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Madrid, 28040, Spain | |
dc.affiliation | Pacheco, M., Departamento de Física, Universidad Técnica Federico Santa María, Casilla 110 V, Valparaíso, Chile | |
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dc.type.version | info:eu-repo/semantics/publishedVersion | |
dc.identifier.reponame | reponame:Repositorio Institucional Universidad de Medellín | |
dc.identifier.repourl | repourl:https://repository.udem.edu.co/ | |
dc.identifier.instname | instname:Universidad de Medellín | |