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Temperature shift of intraband absorption peak in tunnel-coupled QW structure
dc.creator | Akimov V. | spa |
dc.creator | Firsov D.A. | spa |
dc.creator | Duque C.A. | spa |
dc.creator | Tulupenko V. | spa |
dc.creator | Balagula R.M. | spa |
dc.creator | Vinnichenko M.Y. | spa |
dc.creator | Vorobjev L.E. | spa |
dc.date.accessioned | 2017-05-12T16:05:57Z | |
dc.date.available | 2017-05-12T16:05:57Z | |
dc.date.created | 2017 | |
dc.identifier.issn | 9253467 | |
dc.identifier.uri | http://hdl.handle.net/11407/3150 | |
dc.description.abstract | An experimental study of the intersubband light absorption by the 100-period GaAs/Al0.25Ga0.75As double quantum well heterostructure doped with silicon is reported and interpreted. Small temperature redshift of the 1–3 intersubband absorption peak is detected. Numerical calculations of the absorption coefficient including self-consistent Hartree calculations of the bottom of the conduction band show good agreement with the observed phenomena. The temperature dependence of energy gap of the material and the depolarization shift should be accounted for to explain the shift. © 2017 Elsevier B.V. | eng |
dc.language.iso | eng | |
dc.publisher | Elsevier B.V. | spa |
dc.relation.isversionof | http://www.sciencedirect.com/science/article/pii/S0925346717300654 | spa |
dc.source | Scopus | spa |
dc.subject | Double quantum wells | spa |
dc.subject | Self-consistent calculations | spa |
dc.subject | Semiconductor nanostructures | spa |
dc.title | Temperature shift of intraband absorption peak in tunnel-coupled QW structure | spa |
dc.type | Article | eng |
dc.rights.accessrights | info:eu-repo/semantics/restrictedAccess | |
dc.rights.accessrights | info:eu-repo/semantics/restrictedAccess | |
dc.contributor.affiliation | Akimov, V., Grupo MATBIOM, Departamento de Ciencias Basicas, Universidad de Medellín, Carrera 87 No 30-65, Medellín, Colombia | spa |
dc.contributor.affiliation | Firsov, D.A., Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russian Federation | spa |
dc.contributor.affiliation | Duque, C.A., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia | spa |
dc.contributor.affiliation | Tulupenko, V., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia | spa |
dc.contributor.affiliation | Balagula, R.M., Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russian Federation | spa |
dc.contributor.affiliation | Vinnichenko, M.Y., Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russian Federation | spa |
dc.contributor.affiliation | Vorobjev, L.E., Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russian Federation | spa |
dc.identifier.doi | 10.1016/j.optmat.2017.01.050 | |
dc.subject.keyword | Electromagnetic wave absorption | eng |
dc.subject.keyword | Light absorption | eng |
dc.subject.keyword | Temperature distribution | eng |
dc.subject.keyword | Absorption co-efficient | eng |
dc.subject.keyword | Double quantum well | eng |
dc.subject.keyword | Intersubband absorption | eng |
dc.subject.keyword | Intraband absorptions | eng |
dc.subject.keyword | Numerical calculation | eng |
dc.subject.keyword | Self-consistent calculation | eng |
dc.subject.keyword | Semiconductor nanostructures | eng |
dc.subject.keyword | Temperature dependence | eng |
dc.subject.keyword | Semiconductor quantum wells | eng |
dc.relation.ispartofes | Optical Materials | spa |
dc.type.driver | info:eu-repo/semantics/article |
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