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Symmetry-protected metallic and topological phases in penta-materials

dc.creatorBravo S.
dc.creatorCorrea J.
dc.creatorChico L.
dc.creatorPacheco M.
dc.date2019
dc.date.accessioned2020-04-29T14:53:41Z
dc.date.available2020-04-29T14:53:41Z
dc.identifier.issn20452322
dc.identifier.urihttp://hdl.handle.net/11407/5696
dc.descriptionWe analyze the symmetry and topological features of a family of materials closely related to penta-graphene, derived from it by adsorption or substitution of different atoms. Our description is based on a novel approach, called topological quantum chemistry, that allows to characterize the topology of the electronic bands, based on the mapping between real and reciprocal space. In particular, by adsorption of alkaline (Li or Na) atoms we obtain a nodal line metal at room temperature, with a continuum of Dirac points around the perimeter of the Brillouin zone. This behavior is also observed in some substitutional derivatives of penta-graphene, such as penta-PC2. Breaking of time-reversal symmetry can be achieved by the use of magnetic atoms; we study penta-MnC2, which also presents spin-orbit coupling and reveals a Chern insulator phase. We find that for this family of materials, symmetry is the source of protection for metallic and nontrivial topological phases that can be associated to the presence of fractional band filling, spin-orbit coupling and time-reversal symmetry breaking. © 2019, The Author(s).
dc.language.isoeng
dc.publisherNature Publishing Group
dc.relation.isversionofhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85071762621&doi=10.1038%2fs41598-019-49187-w&partnerID=40&md5=8dc7ffecff46b5ff215cb56372975af3
dc.sourceScientific Reports
dc.titleSymmetry-protected metallic and topological phases in penta-materials
dc.typeArticleeng
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.publisher.programFacultad de Ciencias Básicas
dc.identifier.doi10.1038/s41598-019-49187-w
dc.relation.citationvolume9
dc.relation.citationissue1
dc.publisher.facultyFacultad de Ciencias Básicas
dc.affiliationBravo, S., Universidad Técnica Federico Santa María, Departamento de Física, Valparaíso, Chile; Correa, J., Universidad de Medellín, Facultad de Ciencias Básicas, Medellín, Colombia; Chico, L., Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), C/Sor Juana Inés de la Cruz 3, Madrid, 28049, Spain; Pacheco, M., Universidad Técnica Federico Santa María, Departamento de Física, Valparaíso, Chile
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