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dc.creatorAkimov V.spa
dc.creatorFirsov D.A.spa
dc.creatorDuque C.A.spa
dc.creatorTulupenko V.spa
dc.creatorBalagula R.M.spa
dc.creatorVinnichenko M.Y.spa
dc.creatorVorobjev L.E.spa
dc.date.accessioned2017-05-12T16:05:57Z
dc.date.available2017-05-12T16:05:57Z
dc.date.created2017
dc.identifier.issn9253467
dc.identifier.urihttp://hdl.handle.net/11407/3150
dc.description.abstractAn experimental study of the intersubband light absorption by the 100-period GaAs/Al0.25Ga0.75As double quantum well heterostructure doped with silicon is reported and interpreted. Small temperature redshift of the 1–3 intersubband absorption peak is detected. Numerical calculations of the absorption coefficient including self-consistent Hartree calculations of the bottom of the conduction band show good agreement with the observed phenomena. The temperature dependence of energy gap of the material and the depolarization shift should be accounted for to explain the shift. © 2017 Elsevier B.V.eng
dc.language.isoeng
dc.publisherElsevier B.V.spa
dc.relation.isversionofhttp://www.sciencedirect.com/science/article/pii/S0925346717300654spa
dc.sourceScopusspa
dc.subjectDouble quantum wellsspa
dc.subjectSelf-consistent calculationsspa
dc.subjectSemiconductor nanostructuresspa
dc.titleTemperature shift of intraband absorption peak in tunnel-coupled QW structurespa
dc.typeArticleeng
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.contributor.affiliationAkimov, V., Grupo MATBIOM, Departamento de Ciencias Basicas, Universidad de Medellín, Carrera 87 No 30-65, Medellín, Colombiaspa
dc.contributor.affiliationFirsov, D.A., Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russian Federationspa
dc.contributor.affiliationDuque, C.A., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombiaspa
dc.contributor.affiliationTulupenko, V., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombiaspa
dc.contributor.affiliationBalagula, R.M., Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russian Federationspa
dc.contributor.affiliationVinnichenko, M.Y., Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russian Federationspa
dc.contributor.affiliationVorobjev, L.E., Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russian Federationspa
dc.identifier.doi10.1016/j.optmat.2017.01.050
dc.subject.keywordElectromagnetic wave absorptioneng
dc.subject.keywordLight absorptioneng
dc.subject.keywordTemperature distributioneng
dc.subject.keywordAbsorption co-efficienteng
dc.subject.keywordDouble quantum welleng
dc.subject.keywordIntersubband absorptioneng
dc.subject.keywordIntraband absorptionseng
dc.subject.keywordNumerical calculationeng
dc.subject.keywordSelf-consistent calculationeng
dc.subject.keywordSemiconductor nanostructureseng
dc.subject.keywordTemperature dependenceeng
dc.subject.keywordSemiconductor quantum wellseng
dc.relation.ispartofesOptical Materialsspa
dc.type.driverinfo:eu-repo/semantics/article


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