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Background impurities and a delta-doped QW. Part I: Center doping

dc.creatorAkimov V.
dc.creatorTulupenko V.
dc.creatorDuque C.A.
dc.creatorMorales A.L.
dc.creatorDemediuk R.
dc.creatorTiutiunnyk A.
dc.creatorLaroze D.
dc.creatorKovalov V.
dc.creatorSushchenko D.
dc.date2019
dc.date.accessioned2020-04-29T14:53:58Z
dc.date.available2020-04-29T14:53:58Z
dc.identifier.issn2681242
dc.identifier.urihttp://hdl.handle.net/11407/5776
dc.descriptionThe influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiGe quantum well structure with centered delta-doping is studied numerically. The description of the self-consistent method includes the calculation of the donors impurity binding energy in the delta-layer. The delta-layer impurity binding energy as well as the energy differences between the first quantized electron subbands in the well demonstrate a significant dependence on the characteristics of the background doping. Therefore, the background doping cannot be neglected when studying phenomena like intersubband optical transitions. © 2019 IOP Publishing Ltd.
dc.language.isoeng
dc.publisherInstitute of Physics Publishing
dc.relation.isversionofhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85081139356&doi=10.1088%2f1361-6641%2fab4c7a&partnerID=40&md5=ae9b7e4552959ef33dcd023cb99e2bc6
dc.sourceSemiconductor Science and Technology
dc.subjectimpurity binding energy
dc.subjectmodulation doping
dc.subjectself-consistent calculation
dc.subjectsemiconductor quantum wells
dc.subjectBinding energy
dc.subjectSemiconductor doping
dc.subjectSilicon
dc.subjectBackground impurities
dc.subjectEnergy characteristics
dc.subjectImpurity binding energy
dc.subjectIntersubband optical transitions
dc.subjectModulation doping
dc.subjectQuantum well structures
dc.subjectSelf-consistent calculation
dc.subjectSelf-consistent method
dc.subjectSemiconductor quantum wells
dc.titleBackground impurities and a delta-doped QW. Part I: Center doping
dc.typeArticleeng
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.publisher.programFacultad de Ciencias Básicas
dc.identifier.doi10.1088/1361-6641/ab4c7a
dc.relation.citationvolume34
dc.relation.citationissue12
dc.publisher.facultyFacultad de Ciencias Básicas
dc.affiliationAkimov, V., Facultad de Ciencias Básicas, Universidad de Medellín-UdeM, Carrera 87 No.30-65, Medellín, Colombia, Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No.52-21, Medellín, Colombia; Tulupenko, V., Donbass State Engineering Academy, Academichna str. 62, Kramatorsk, 84313, Ukraine, Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No.52-21, Medellín, Colombia; Duque, C.A., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No.52-21, Medellín, Colombia; Morales, A.L., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No.52-21, Medellín, Colombia; Demediuk, R., Donbass State Engineering Academy, Academichna str. 62, Kramatorsk, 84313, Ukraine; Tiutiunnyk, A., Instituto de Alta Investigación, Cedenna, Universidad de Tarapacá, casilla 7D, Arica, Chile; Laroze, D., Instituto de Alta Investigación, Cedenna, Universidad de Tarapacá, casilla 7D, Arica, Chile; Kovalov, V., Donbass State Engineering Academy, Academichna str. 62, Kramatorsk, 84313, Ukraine; Sushchenko, D., Donbass State Engineering Academy, Academichna str. 62, Kramatorsk, 84313, Ukraine
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