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Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW
dc.creator | Tulupenko V. | |
dc.creator | Akimov V. | |
dc.creator | Demediuk R. | |
dc.creator | Duque C. | |
dc.creator | Fomina O. | |
dc.creator | Sushchenko D. | |
dc.date | 2019 | |
dc.date.accessioned | 2020-04-29T14:54:04Z | |
dc.date.available | 2020-04-29T14:54:04Z | |
dc.identifier.isbn | 9781728120652 | |
dc.identifier.uri | http://hdl.handle.net/11407/5801 | |
dc.description | Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region. © 2019 IEEE. | |
dc.language.iso | eng | |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | |
dc.relation.isversionof | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85070899466&doi=10.1109%2fELNANO.2019.8783451&partnerID=40&md5=45e762c2bc5f25eca48ac26c0298da6a | |
dc.source | 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings | |
dc.subject | background impurity | |
dc.subject | modulation doping | |
dc.subject | SiGe quantum wells | |
dc.subject | Binding energy | |
dc.subject | Nanotechnology | |
dc.subject | Si-Ge alloys | |
dc.subject | Background impurities | |
dc.subject | Energy structures | |
dc.subject | Impurity binding energy | |
dc.subject | Modulation doping | |
dc.subject | Quantum well structures | |
dc.subject | SiGe quantum wells | |
dc.subject | THz frequencies | |
dc.subject | Tunable optical devices | |
dc.subject | Semiconductor quantum wells | |
dc.title | Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW | |
dc.type | Conference Paper | eng |
dc.rights.accessrights | info:eu-repo/semantics/restrictedAccess | |
dc.publisher.program | Facultad de Ciencias Básicas | |
dc.identifier.doi | 10.1109/ELNANO.2019.8783451 | |
dc.relation.citationstartpage | 177 | |
dc.relation.citationendpage | 180 | |
dc.publisher.faculty | Facultad de Ciencias Básicas | |
dc.affiliation | Tulupenko, V., Physics Department, Donbas State Engineering Academy, Kramatorsk, Ukraine; Akimov, V., Facultad de Ciencias Basicas, Universidad de Medellín, Medellín, Colombia; Demediuk, R., Physics Department, Donbas State Engineering Academy, Kramatorsk, Ukraine; Duque, C., Grupo de Materia Condensada-UdeA, Universidad de Antioquia, Medellin, Colombia; Fomina, O., Physics Department, Donbas State Engineering Academy, Kramatorsk, Ukraine; Sushchenko, D., Physics Department, Donbas State Engineering Academy, Kramatorsk, Ukraine | |
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dc.type.version | info:eu-repo/semantics/publishedVersion | |
dc.type.driver | info:eu-repo/semantics/article |
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