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Lattice strain influence on conduction band nonparabolicity in GaAs and InAs: Application to intraband optical absorption in InGaAs-GaAs asymmetric step quantum wells

dc.creatorMozo-Vargas J.J.M.
dc.creatorMora-Ramos M.E.
dc.creatorCorrea J.D.
dc.creatorDuque C.A.
dc.date2021
dc.date.accessioned2021-02-05T14:57:35Z
dc.date.available2021-02-05T14:57:35Z
dc.identifier.issn13698001
dc.identifier.urihttp://hdl.handle.net/11407/5892
dc.descriptionWe use empirical sps
dc.descriptiond5 tight-binding calculations to determine the effects of compressive biaxial lattice strain, perpendicular to the [001] crystal direction, in zinc blende GaAs and InAs. Under that approach, we have been able to compute the behavior of quantities such as the average valence band energy, the energy band gap, the conduction band effective mass, and the spin-orbit split-off energy, as functions of the biaxial strain, within a range from 0 to −7%. Expressions governing these dependencies are reported for both materials. With such information at hand it is possible to calculate the variation of the coefficient of conduction band nonparabolicity due to the presence of strain. Also, the outcome for such quantities allows to evaluate the valence band offset in GaAs/InGaAs heterointerfaces as a consequence of the strain appearing from the difference between the lattice constants of the involved materials. Taking advantage of the above mentioned results, we have performed the calculation of confined conduction band states in step-like asymmetric quantum wells of the GaAs/Inx1Ga1-x1As/Inx2Ga1-x2As/GaAs prototype, using a k→⋅p→ formalism that solves the effective mass equation arising from a bi-cuadratic (nonparabolic) dispersion law. We report the calculation of the optical absorption coefficient related with intraband transitions that involve the ground and first excited energy levels. For that purpose, the study takes into account the variation of the layer widths and compositions. © 2020 Elsevier Ltd
dc.language.isoeng
dc.publisherElsevier Ltd
dc.relation.isversionofhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85092700561&doi=10.1016%2fj.mssp.2020.105490&partnerID=40&md5=af0fe934a3f658b77cf1f2f7cc1bb57a
dc.sourceMaterials Science in Semiconductor Processing
dc.titleLattice strain influence on conduction band nonparabolicity in GaAs and InAs: Application to intraband optical absorption in InGaAs-GaAs asymmetric step quantum wells
dc.typeArticleeng
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.identifier.doi10.1016/j.mssp.2020.105490
dc.subject.keywordConduction bandseng
dc.subject.keywordEnergy gapeng
dc.subject.keywordGallium arsenideeng
dc.subject.keywordIndium arsenideeng
dc.subject.keywordLattice constantseng
dc.subject.keywordLight absorptioneng
dc.subject.keywordOptical latticeseng
dc.subject.keywordQuantum theoryeng
dc.subject.keywordSemiconducting galliumeng
dc.subject.keywordSemiconducting indium gallium arsenideeng
dc.subject.keywordSemiconductor quantum wellseng
dc.subject.keywordSpin orbit couplingeng
dc.subject.keywordValence bandseng
dc.subject.keywordZinc sulfideeng
dc.subject.keywordAsymmetric quantum wellseng
dc.subject.keywordBand nonparabolicityeng
dc.subject.keywordConduction-band stateeng
dc.subject.keywordEffective-mass equationeng
dc.subject.keywordExcited energy leveleng
dc.subject.keywordIntraband transitionseng
dc.subject.keywordOptical absorption coefficientseng
dc.subject.keywordTight-binding calculationseng
dc.subject.keywordIII-V semiconductorseng
dc.relation.citationvolume123
dc.publisher.facultyFacultad de Ciencias Básicasspa
dc.affiliationMozo-Vargas, J.J.M., Centro de Investigación en Dispositivos Semiconductores-ICUAP, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria, Puebla, CP 72570, Mexico, Instituto de Física, Benemérita Universidad Autńoma de Puebla, Ciudad Universitaria, Puebla, CP 72570, Mexico
dc.affiliationMora-Ramos, M.E., Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Cuernavaca, Morelos CP 62209, Mexico, Facultad de Ciencias Básicas, Universidad de Medellín, Medellín, Colombia
dc.affiliationCorrea, J.D., Facultad de Ciencias Básicas, Universidad de Medellín, Medellín, Colombia
dc.affiliationDuque, C.A., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia
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