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LO-Phonons and dielectric polarization effects on the electronic properties of doped GaN/InN spherical core/shell quantum dots in a nonparabolic band model
dc.creator | Talbi A. | |
dc.creator | El Haouari M. | |
dc.creator | Nouneh K. | |
dc.creator | Pérez L.M. | |
dc.creator | Tiutiunnyk A. | |
dc.creator | Laroze D. | |
dc.creator | Courel M. | |
dc.creator | Mora-Ramos M.E. | |
dc.creator | Feddi E. | |
dc.date | 2021 | |
dc.date.accessioned | 2021-02-05T14:57:36Z | |
dc.date.available | 2021-02-05T14:57:36Z | |
dc.identifier.issn | 9478396 | |
dc.identifier.uri | http://hdl.handle.net/11407/5894 | |
dc.description | The electron energy spectrum of a core/shell spherical quantum dot made of zincblende GaN/InN compounds is investigated taking into account the presence of an off-center donor atom and the influence of band nonparabolicity. The interaction of both the charge carrier and the Coulombic core with longitudinal optical phonons is included through Frö hlich and Aldrich-Bajaj theories, respectively. The ground state energy is determined by solving the resulting conduction band effective mass equation via the variational Ritz principle. A detailed analysis of the features of electron and hole spectra as functions of the core and shell sizes is presented, highlighting the possibility of transitioning between type-I and type-II structures. A detailed discussion about the effects of conduction band nonparabolicity, dielectric mismatch and electron-phonon interaction onto the impurity binding energy is provided. It was found that, in general, nonparabolicity of the conduction band leads to larger impurity binding energy, and that LO-phonon and dielectric mismatch effects tend to reduce the value of the latter quantity. © 2021, Springer-Verlag GmbH Germany, part of Springer Nature. | |
dc.language.iso | eng | |
dc.publisher | Springer Science and Business Media Deutschland GmbH | |
dc.relation.isversionof | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098636670&doi=10.1007%2fs00339-020-04137-6&partnerID=40&md5=5af24c02ded7a5b961ddc03f1f3eb4d5 | |
dc.source | Applied Physics A: Materials Science and Processing | |
dc.subject | Band nonparabolicity | spa |
dc.subject | Core–Shell | spa |
dc.subject | Dielectric mismatch | spa |
dc.subject | Polaron effects | spa |
dc.subject | Spherical quantum dot | spa |
dc.subject | Zincblende III–V nitrides | spa |
dc.title | LO-Phonons and dielectric polarization effects on the electronic properties of doped GaN/InN spherical core/shell quantum dots in a nonparabolic band model | |
dc.type | Article | eng |
dc.rights.accessrights | info:eu-repo/semantics/restrictedAccess | |
dc.identifier.doi | 10.1007/s00339-020-04137-6 | |
dc.subject.keyword | Conduction bands | eng |
dc.subject.keyword | Electron-phonon interactions | eng |
dc.subject.keyword | Electronic properties | eng |
dc.subject.keyword | Gallium nitride | eng |
dc.subject.keyword | Ground state | eng |
dc.subject.keyword | III-V semiconductors | eng |
dc.subject.keyword | Nanocrystals | eng |
dc.subject.keyword | Semiconductor quantum dots | eng |
dc.subject.keyword | Semiconductor quantum wells | eng |
dc.subject.keyword | Zinc sulfide | eng |
dc.subject.keyword | Core/shell quantum dots | eng |
dc.subject.keyword | Dielectric polarization | eng |
dc.subject.keyword | Effective-mass equation | eng |
dc.subject.keyword | Electron energy spectrum | eng |
dc.subject.keyword | Ground-state energies | eng |
dc.subject.keyword | Impurity binding energy | eng |
dc.subject.keyword | Longitudinal optical phonons | eng |
dc.subject.keyword | Spherical quantum dot | eng |
dc.subject.keyword | Binding energy | eng |
dc.relation.citationvolume | 127 | |
dc.relation.citationissue | 1 | |
dc.publisher.faculty | Facultad de Ciencias Básicas | spa |
dc.affiliation | Talbi, A., Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM de Rabat, Mohammed V University in Rabat, Rabat, Morocco, Laboratory of Materials Physics and Subatomics, Department of Physics, Faculty of Science, Ibn Tofail University, Kenitra, Morocco | |
dc.affiliation | El Haouari, M., Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM de Rabat, Mohammed V University in Rabat, Rabat, Morocco, Centre Régional des Métiers de l’Education et de Formation (CRMEF), Tanger, Morocco | |
dc.affiliation | Nouneh, K., Laboratory of Materials Physics and Subatomics, Department of Physics, Faculty of Science, Ibn Tofail University, Kenitra, Morocco | |
dc.affiliation | Pérez, L.M., Instituto de Alta Investigación, CEDENNA, Universidad de Tarapacá, Casilla 7 D, Arica, Chile | |
dc.affiliation | Tiutiunnyk, A., Instituto de Alta Investigación, CEDENNA, Universidad de Tarapacá, Casilla 7 D, Arica, Chile | |
dc.affiliation | Laroze, D., Instituto de Alta Investigación, CEDENNA, Universidad de Tarapacá, Casilla 7 D, Arica, Chile | |
dc.affiliation | Courel, M., Centro Universitario de los Valles (CUValles), Universidad de Guadalajara, Carretera Guadalajara-Ameca Km. 45.5, Ameca, Jalisco C.P. 46600, Mexico | |
dc.affiliation | Mora-Ramos, M.E., Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos CP 62209, Mexico, Facultad de Ciencias Básicas, Universidad de Medellín, Medellín, Colombia | |
dc.affiliation | Feddi, E., Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM de Rabat, Mohammed V University in Rabat, Rabat, Morocco | |
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dc.type.version | info:eu-repo/semantics/publishedVersion | |
dc.type.driver | info:eu-repo/semantics/article |
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