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Background impurities in a delta-doped QW. Part II: Edge doping
dc.contributor.author | Akimov V | |
dc.contributor.author | Tulupenko V | |
dc.contributor.author | Duque C.A | |
dc.contributor.author | Morales A.L | |
dc.contributor.author | Demediuk R | |
dc.contributor.author | Tiutiunnyk A | |
dc.contributor.author | Laroze D | |
dc.contributor.author | Kovalov V | |
dc.contributor.author | Sushchenko D. | |
dc.date.accessioned | 2022-09-14T14:33:29Z | |
dc.date.available | 2022-09-14T14:33:29Z | |
dc.date.created | 2021 | |
dc.identifier.issn | 2681242 | |
dc.identifier.uri | http://hdl.handle.net/11407/7396 | |
dc.description | This is the second part of our study of the background impurity influence on the intersubband energy structure of a single SiGe/Si/SiGe quantum well with the impurity delta layer within the well. By the background impurity we mean sparse shallow donor doping throughout the infinitely wide barriers. In this part we consider a situation where the delta layer is positioned near the edge of the well and the structure symmetry is broken. We explain in detail the necessary modifications of our self-consistent method that includes calculation of impurity binding energy. The results particularly show that the mentioned asymmetry combined with the background impurity in the barriers provides new features to the effect of tuning the intersubband optical transitions by the ionization grade of the impurity in delta-layer that provides new technological possibilities. © 2021 IOP Publishing Ltd. | eng |
dc.language.iso | eng | |
dc.publisher | IOP Publishing Ltd | |
dc.relation.isversionof | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85102119666&doi=10.1088%2f1361-6641%2fabe65b&partnerID=40&md5=e647ab83472b6d9f25ce09b7c5d36829 | |
dc.source | Semiconductor Science and Technology | |
dc.title | Background impurities in a delta-doped QW. Part II: Edge doping | |
dc.type | Article | |
dc.rights.accessrights | info:eu-repo/semantics/restrictedAccess | |
dc.publisher.program | Ciencias Básicas | |
dc.type.spa | Artículo | |
dc.identifier.doi | 10.1088/1361-6641/abe65b | |
dc.subject.keyword | Impurity binding energy | eng |
dc.subject.keyword | Modulation doping | eng |
dc.subject.keyword | Quantum well | eng |
dc.subject.keyword | Self-consistent method | eng |
dc.subject.keyword | Binding energy | eng |
dc.subject.keyword | Silicon | eng |
dc.subject.keyword | Background impurities | eng |
dc.subject.keyword | Delta layers | eng |
dc.subject.keyword | Impurity binding energy | eng |
dc.subject.keyword | Intersubband energy | eng |
dc.subject.keyword | Intersubband optical transitions | eng |
dc.subject.keyword | Self-consistent method | eng |
dc.subject.keyword | Shallow donors | eng |
dc.subject.keyword | Structure symmetry | eng |
dc.subject.keyword | Semiconductor quantum wells | eng |
dc.relation.citationvolume | 36 | |
dc.relation.citationissue | 4 | |
dc.publisher.faculty | Facultad de Ciencias Básicas | |
dc.affiliation | Akimov, V., Departamento de Ciencias Básicas, Universidad de Medellín, Carrera 87 No. 30-65, Medellín, Colombia, Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia, Donbass State Engineering Academy, Kramatorsk, 84313, Ukraine | |
dc.affiliation | Tulupenko, V., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia, Donbass State Engineering Academy, Kramatorsk, 84313, Ukraine | |
dc.affiliation | Duque, C.A., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia, Donbass State Engineering Academy, Kramatorsk, 84313, Ukraine | |
dc.affiliation | Morales, A.L., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia | |
dc.affiliation | Demediuk, R., Donbass State Engineering Academy, Kramatorsk, 84313, Ukraine | |
dc.affiliation | Tiutiunnyk, A., Instituto de Alta Investigación, Cedenna, Universidad de Tarapacá, casilla 7D, Arica, Chile | |
dc.affiliation | Laroze, D., Instituto de Alta Investigación, Cedenna, Universidad de Tarapacá, casilla 7D, Arica, Chile | |
dc.affiliation | Kovalov, V., Donbass State Engineering Academy, Kramatorsk, 84313, Ukraine | |
dc.affiliation | Sushchenko, D., Donbass State Engineering Academy, Kramatorsk, 84313, Ukraine | |
dc.relation.references | Akimov, V, Tulupenko, V, Duque, C A, Morales, A L, Demediuk, R, Tiutiunnyk, A, Laroze, D, Sushchenko, D, (2019) Semicond. Sci. Technol, 34, p. 125009 | |
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dc.type.coar | http://purl.org/coar/resource_type/c_6501 | |
dc.type.version | info:eu-repo/semantics/publishedVersion | |
dc.type.driver | info:eu-repo/semantics/article | |
dc.identifier.reponame | reponame:Repositorio Institucional Universidad de Medellín | |
dc.identifier.repourl | repourl:https://repository.udem.edu.co/ | |
dc.identifier.instname | instname:Universidad de Medellín |
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