Phase identification and aes depth profile analysis of AgInSe2 thin films for solar cells [Identificación de fases y análisis de perfiles de profundidad aes de películas delgadas de AgInSe2 para celdas solares]
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In this work are presented results related with phase identification and study of the homogeneity in the chemical composition of AgInSe2 thin films grown using a procedure based on the sequential evaporation of metallic precursors in presence of elemental selenium, in a two stage process. Effects of evaporated mass of Ag to evaporated mass of In (mAg/mIn) ratio on the phase, crystalline structure and homogeneity in the chemical composition were studied through X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) measurements. The results showed that the deposition conditions affect the homogeneity of the chemical composition of the AgInSe2 films, as well as the phase in which these films grow. Moreover, conditions were found to prepare thin films containing only the AgInSe2 phase, grown with tetragonal chalcopyrite type structure and good homogeneity of chemical composition in the whole volume. The deposited AgInSe2 films have demonstrated good properties for its use as absorber layers in thin film solar cells.
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