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Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

dc.creatorTiutiunnyk A.spa
dc.creatorAkimov V.spa
dc.creatorTulupenko V.spa
dc.creatorMora-Ramos M.E.spa
dc.creatorKasapoglu E.spa
dc.creatorUngan F.spa
dc.creatorSökmen I.spa
dc.creatorMorales A.L.spa
dc.creatorDuque C.A.spa
dc.date.accessioned2016-06-23T13:04:59Z
dc.date.available2016-06-23T13:04:59Z
dc.date.created2016
dc.identifier.issn9214526
dc.identifier.urihttp://hdl.handle.net/11407/2273
dc.description.abstractElectronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed. © 2015 Elsevier B.V. All rights reserved.eng
dc.language.isoeng
dc.publisherElsevierspa
dc.relation.isversionofhttp://www.sciencedirect.com/science/article/pii/S0921452615303768spa
dc.sourceScopusspa
dc.titleElectronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity statesspa
dc.typeArticle in Presseng
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.contributor.affiliationGrupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombiaspa
dc.contributor.affiliationDepartment of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk, Ukrainespa
dc.contributor.affiliationCentro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexicospa
dc.contributor.affiliationCumhuriyet University, Physics Department, 58140 Sivas, Turkeyspa
dc.contributor.affiliationDepartment of Physics, Dokuz Eylül University, 35160 Buca, Izmir, Turkeyspa
dc.contributor.affiliationUniversidad de Medellín, Carrera 87 No 30-65 Medellín, Colombiaspa
dc.contributor.affiliationCumhuriyet University, Faculty of Technology, Deparment of Optical Engineering, 58140 Sivas, Turkeyspa
dc.identifier.doi10.1016/j.physb.2015.12.045
dc.subject.keywordBinding energyeng
dc.subject.keywordElectric fieldseng
dc.subject.keywordElectronic structureeng
dc.subject.keywordExcitonseng
dc.subject.keywordGallium arsenideeng
dc.subject.keywordNanocrystalseng
dc.subject.keywordNonlinear opticseng
dc.subject.keywordQuantum theoryeng
dc.subject.keywordSemiconducting galliumeng
dc.subject.keywordSemiconductor quantum dotseng
dc.subject.keywordDc electric fieldeng
dc.subject.keywordDonor and acceptoreng
dc.subject.keywordElectronic structure and optical propertieseng
dc.subject.keywordExciton energieseng
dc.subject.keywordExcitonic stateeng
dc.subject.keywordNon-linear optical propertieseng
dc.subject.keywordPhotoluminescence peakeng
dc.subject.keywordShallow impuritieseng
dc.subject.keywordOptical propertieseng
dc.relation.ispartofenPhysica B: Condensed Matter Volume 484, 1 March 2016, Pages 95–108eng
dc.type.driverinfo:eu-repo/semantics/article


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