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dc.creatorRodríguez-Magdaleno K.A.
dc.creatorMora-Ramos M.E.
dc.creatorPérez-Álvarez R.
dc.creatorMartínez-Orozco J.C.
dc.date2020
dc.date.accessioned2020-04-29T14:54:05Z
dc.date.available2020-04-29T14:54:05Z
dc.identifier.issn13698001
dc.identifier.urihttp://hdl.handle.net/11407/5802
dc.descriptionIn this paper we theoretically investigate the role of hydrostatic pressure by analyzing its influence on potential barrier's height in GaAs/AlxGa1?xAs core/shell spherical quantum dots. The values of hydrostatic pressure considered here are always below the ??X crossover. In addition, we take into account the barrier shell's size effects and the barrier's aluminum concentration, looking for a description of the features of the intraband optical absorption coefficient in the system. The electronic structure is calculated within the effective mass approximation. From the numerical point of view the hybrid matrix method was implemented to avoid numerical instability issues that appears in the conventional transfer matrix method. The main intersubband optical transition is considered to take place between the 1s and 1p computed electronic states. The results show that the absorption coefficient undergoes first a red-shift and later a more pronounced blue-shift, depending on the AlxGa1?xAs barrier width (wb1). The absorption coefficient experiences a blue-shift as the barrier's aluminum concentration increases, and it is non monotonically red-shifted as the hydrostatic pressure augments, due to the barrier's height pressure dependency. For the chosen system parameters, the absorption coefficient resonant peak lies within the range of 20 to 30 meV, that corresponds to the THz frequency region. Accordingly, this system can be proposed as a building block for photodetectors in the THz electromagnetic spectrum region. © 2019 Elsevier Ltd
dc.language.isoeng
dc.publisherElsevier Ltd
dc.relation.isversionofhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85077330152&doi=10.1016%2fj.mssp.2019.104906&partnerID=40&md5=578787255333f5f7bed14d0c24068be8
dc.sourceMaterials Science in Semiconductor Processing
dc.subjectAbsorption coefficient
dc.subjectIntraband transitions
dc.subjectSpherical quantum dot
dc.subjectTerahertz
dc.subjectAluminum
dc.subjectBlue shift
dc.subjectElectronic structure
dc.subjectGallium arsenide
dc.subjectHydraulics
dc.subjectHydrostatic pressure
dc.subjectIII-V semiconductors
dc.subjectLight absorption
dc.subjectNanocrystals
dc.subjectNumerical methods
dc.subjectRed Shift
dc.subjectSemiconducting gallium
dc.subjectSemiconductor quantum dots
dc.subjectSpheres
dc.subjectAbsorption co-efficient
dc.subjectEffective mass approximation
dc.subjectElectromagnetic spectra
dc.subjectIntersubband optical transitions
dc.subjectIntraband transitions
dc.subjectOptical absorption coefficients
dc.subjectSpherical quantum dot
dc.subjectTera Hertz
dc.subjectTransfer matrix method
dc.titleEffect of the hydrostatic pressure and shell's Al composition in the intraband absorption coefficient for core/shell spherical GaAs/AlxGa1?xAs quantum dots
dc.typeArticle
dc.typeinfo:eu-repo/semantics/publishedVersion
dc.typeinfo:eu-repo/semantics/article
dc.rights.accessRightsinfo:eu-repo/semantics/restrictedAccess
dc.publisher.programFacultad de Ciencias Básicas
dc.identifier.doi10.1016/j.mssp.2019.104906
dc.citation.volume108
dc.publisher.facultyFacultad de Ciencias Básicas
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